Midium Power Transistors (-30V / -5A)
2SAR542D
Structure PNP Silicon epitaxial planar transistor
Features 1) Low sa...
Midium Power
Transistors (-30V / -5A)
2SAR542D
Structure
PNP Silicon epitaxial planar
transistor
Features 1) Low saturation voltage
VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching
Applications Driver
Dimensions (Unit : mm)
CPT3
(SC-63)
(1) Base (2) Collector (3) Emitter
Packaging specifications
Type
Package Code Basic ordering unit (pieces)
CPT3 TL
2500
Inner circuit (Unit : mm)
(3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC
Pulsed
Power dissipation
Junction temperature Range of storage temperature
VCBO VCEO VEBO
IC ICP *1 PD *2 PD *3 Tj Tstg
-30 -30 -6 -5 -10 1 10 150 -55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
*3 TC=25°C
Unit V V V A A W W °C °C
(1)
(1) Base (2) Collector (3) Emitter
(2)
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1/5
2010.12 - Rev.A
2SAR542D
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain
BVCEO BVCBO BVEBO
ICBO IEBO VCE(sa*t)1 hFE
Transition frequency
fT *1
Min. -30 -30 -6
200
-
Collector output capacitance
Turn-on time Storage time Fall time
*1 Pulsed *2 See switching time test circuit
Cob
ton *2 tstg *2 tf *2
-
-
Data Sheet
Typ. -
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