2SAR542P

Midium Power Transistors (-30V / -5A) 2SAR542P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching  Applications Driver  Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR542P   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -30 -30 -6 -5 -10 0.5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) Unit V V V A A W W C C  Dimensions (Unit : mm) (1) (2) (3) Abbreviated symbol : MQ  Inner circuit (Unit : mm) (1) Base (2) Collector (3) Emitter www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A 2SAR542P Electrical characteristic (Ta = 25C) Parameter Symbol Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain BVCEO BVCBO BVEBO ICBO IEBO VCE(sa*t)1 hFE Transition frequency fT *1 Min. -30 -30 -6 200 - Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test c...