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2SAR543D Dataheets PDF



Part Number 2SAR543D
Manufacturers Rohm
Logo Rohm
Description PNP -4.0A -50V Middle Power Transistor
Datasheet 2SAR543D Datasheet2SAR543D Datasheet (PDF)

2SAR543D PNP -4.0A -50V Middle Power Transistor Datasheet lOutline Parameter Value CPT3 Collector VCEO -50V IC -4.0A lFeatures 1) Suitable for Middle Power Driver Base Emitter 2SAR543D (SC-63) for 2) Complementary NPN Types : 2SCR543D 3) Low VCE(sat) d VCE(sat)= -0.4V(Max.) (IC/IB= -2A/ -100mA) e 4) Lead Free/RoHS Compliant. d lInner circuit n s Collector e n Base m ig Emitter m s lPackaging specifications o e Part No. Package c D 2SAR543D CPT3 Package size (mm) .

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2SAR543D PNP -4.0A -50V Middle Power Transistor Datasheet lOutline Parameter Value CPT3 Collector VCEO -50V IC -4.0A lFeatures 1) Suitable for Middle Power Driver Base Emitter 2SAR543D (SC-63) for 2) Complementary NPN Types : 2SCR543D 3) Low VCE(sat) d VCE(sat)= -0.4V(Max.) (IC/IB= -2A/ -100mA) e 4) Lead Free/RoHS Compliant. d lInner circuit n s Collector e n Base m ig Emitter m s lPackaging specifications o e Part No. Package c D 2SAR543D CPT3 Package size (mm) 6595 lApplications Motor driver , LED driver Power supply Taping code TL Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 330 16 2,500 e w lAbsolute maximum ratings (Ta = 25°C) R e Parameter t Collector-base voltage N Collector-emitter voltage o Emitter-base voltage NCollector current DC Pulsed Symbol VCBO VCEO VEBO IC ICP *1 Values -50 -50 -6 -4.0 -8.0 Marking AR543 Unit V V V A A Power dissipation PD *2 PD *3 1 W 10 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C *1 Pw=10ms , single pulse *2 Mounted on a substrate *3 Tc=25°C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/6 2013.05 - Rev.B 2SAR543D Data Sheet lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC = -1mA -50 - - V Collector-base breakdown voltage BVCBO IC = -100mA -50 - - V Emitter-base breakdown voltage BVEBO IE = -100mA -6 r Collector cut-off current ICBO VCB = -50V - fo Emitter cut-off current IEBO VEB = -4V - Collector-emitter saturation voltage VCE(sat) *1 IC = -2A, IB = -100mA - d DC current gain hFE VCE = -3V, IC = -100mA 180 de Transition frequency n s Output capacitance fT VCE = -10V, IE = 300mA f=100MHZ - Cob VCB = -10V, IE = 0A, f = 1MHz - e n Turn-on time m ig Storage time s Fall time ton *2 IC= -2A - tstg *2 IB1= -200mA IB2=200mA - tf *2 VCC⋍ -10V - m e *1 Pulsed o *2 See switching time test circuit - - - -1 - -1 -0.20 -0.40 - 450 300 - 35 - 45 - 250 - 40 - V mA mA V MHz pF ns ns ns Not RecNew D lSwitching time test circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/6 2013.05 - Rev.B 2SAR543D lElectrical characteristic curves(Ta = 25°C) Data Sheet COLLECTOR CURRENT : IC [mA] Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics -10000 -1.0 -5.0mA COLLECTOR CURRENT : IC [A] VCE= -3V -1000 -0.8 Ta=125ºC 75ºC -0.6 25ºC for-4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -100 d -10 -40ºC de -1 0 -0.5 -1 -1.5 n s BASE TO EMITTER VOLTAGE : VBE [V] -0.4 -0.2 -2.0mA -1.5mA -1.0mA IB= -0.5mA 0.0 0.0 -0.5 -1.0 -1.5 -2.0 COLECTOR TO EMITTE VOLTAGE : VCE [V] me sign Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC current gain vs. output current (II) m e 1000 VCE= -3V 1000 Ta=25ºC eco w D Ta=125ºC 100 75ºC R e 25ºC -40ºC VCE= -5V 100 -3V DC CURRENT GAIN : hFE Not N 10 10 -1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA] DC CURRENT GAIN : hFE www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/6 2013.05 - Rev.B 2SAR543D lElectrical characteristic curves(Ta = 25°C) Data Sheet COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (I) vs. Collector Current (II) -1 -1 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V] IC / IB = 20 Ta=25ºC -0.1 for -0.1 ded -0.01 -1 Ta=125ºC 75ºC 25ºC -40ºC -10 -100 -1000 -10000 n s COLLECTOR CURRENT : IC [mA] -0.01 -0.001 -1 IC / IB = 50 20 10 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC [mA] me sign Fig.7 Base-Emitter Saturation Voltage vs. Collector Current m e -10 Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 TRANSITION FREQUENCY : fT [MHz] eco w D -1 100 t R Ne Ta= -40ºC 25ºC o 75ºC 125ºC IC / IB = 20 Pulsed N-0.1 10 Ta=25ºC VCE= -10V -1 -10 -100 -1000 -10000 10 100 1000 COLLECTOR CURRENT : IC [mA] EMITTER CURRENT :IE [mA] BASE-EMITTER SATURATION VOLTAGE : VBE(sat) [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/6 2013.05 - Rev.B 2SAR543D Data Sheet lElectrical characteristic curves(Ta = 25°C) COLLECTOR OUTPUT CAPACITANCE : Cob [pF] EMITTER INPUT CAPACITANCE : Cib [pF] COLLECTOR CURRENT : IC [A] Fig.9 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs. Fig.10 Safe Operating Area Collector-Base Voltage 1000 -10 Ta=25ºC Cib f=1MHz IE=0A r IC=0A 100 fo Cob 10 ded 1 -0.1 -1 -10 -100 n s COLLECTOR - BASE VOLTAGE : VCB [V] Not RecNoemwmDeesign EMITTER-BASE VOLTAGE:VEB[V] 1ms 10ms -1 -0.1 DC -0.01 DC Ta=25ºC (Mounted on a substrate) Tc=25ºC Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE [V] www.rohm.com .


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