Document
2SAR543D
PNP -4.0A -50V Middle Power Transistor
Datasheet
lOutline
Parameter
Value
CPT3
Collector
VCEO
-50V
IC
-4.0A
lFeatures 1) Suitable for Middle Power Driver
Base
Emitter
2SAR543D (SC-63)
for
2) Complementary NPN Types : 2SCR543D 3) Low VCE(sat)
d VCE(sat)= -0.4V(Max.)
(IC/IB= -2A/ -100mA)
e 4) Lead Free/RoHS Compliant.
d lInner circuit n s Collector
e n Base
m ig Emitter
m s lPackaging specifications
o e Part No.
Package
c D 2SAR543D
CPT3
Package size (mm)
6595
lApplications Motor driver , LED driver Power supply
Taping code
TL
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
330
16
2,500
e w lAbsolute maximum ratings (Ta = 25°C)
R e Parameter
t Collector-base voltage
N Collector-emitter voltage
o Emitter-base voltage
NCollector current
DC Pulsed
Symbol VCBO VCEO VEBO IC ICP *1
Values -50 -50 -6 -4.0 -8.0
Marking
AR543
Unit V V V A A
Power dissipation
PD *2 PD *3
1
W
10
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
*1 Pw=10ms , single pulse
*2 Mounted on a substrate
*3 Tc=25°C
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© 2013 ROHM Co., Ltd. All rights reserved.
1/6
2013.05 - Rev.B
2SAR543D
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Collector-emitter breakdown voltage
BVCEO IC = -1mA
-50
-
-
V
Collector-base breakdown voltage
BVCBO IC = -100mA
-50
-
-
V
Emitter-base breakdown voltage
BVEBO IE = -100mA
-6
r Collector cut-off current
ICBO VCB = -50V
-
fo Emitter cut-off current
IEBO VEB = -4V
-
Collector-emitter saturation voltage
VCE(sat) *1 IC = -2A, IB = -100mA
-
d DC current gain
hFE VCE = -3V, IC = -100mA 180
de Transition frequency n s Output capacitance
fT
VCE = -10V, IE = 300mA f=100MHZ
-
Cob
VCB = -10V, IE = 0A, f = 1MHz
-
e n Turn-on time m ig Storage time s Fall time
ton *2
IC= -2A
-
tstg *2
IB1= -200mA IB2=200mA
-
tf *2
VCC⋍ -10V
-
m e *1 Pulsed o *2 See switching time test circuit
-
-
-
-1
-
-1
-0.20 -0.40
-
450
300
-
35
-
45
-
250
-
40
-
V mA mA V MHz pF ns ns ns
Not RecNew D lSwitching time test circuit
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© 2013 ROHM Co., Ltd. All rights reserved.
2/6
2013.05 - Rev.B
2SAR543D lElectrical characteristic curves(Ta = 25°C)
Data Sheet
COLLECTOR CURRENT : IC [mA]
Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics
-10000
-1.0
-5.0mA
COLLECTOR CURRENT : IC [A]
VCE= -3V
-1000
-0.8
Ta=125ºC
75ºC
-0.6
25ºC
for-4.5mA -4.0mA -3.5mA -3.0mA -2.5mA
-100
d -10
-40ºC
de -1
0
-0.5
-1
-1.5
n s BASE TO EMITTER VOLTAGE : VBE [V]
-0.4 -0.2
-2.0mA -1.5mA -1.0mA
IB= -0.5mA
0.0
0.0
-0.5
-1.0
-1.5
-2.0
COLECTOR TO EMITTE VOLTAGE : VCE [V]
me sign Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC current gain vs. output current (II)
m e 1000
VCE= -3V
1000 Ta=25ºC
eco w D Ta=125ºC
100
75ºC
R e 25ºC
-40ºC
VCE= -5V
100
-3V
DC CURRENT GAIN : hFE
Not N 10
10
-1
-10
-100 -1000 -10000
-1
-10
-100 -1000 -10000
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
DC CURRENT GAIN : hFE
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© 2013 ROHM Co., Ltd. All rights reserved.
3/6
2013.05 - Rev.B
2SAR543D lElectrical characteristic curves(Ta = 25°C)
Data Sheet
COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V]
Fig.5 Collector-Emitter Saturation Voltage
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
vs. Collector Current (II)
-1
-1
COLLECTOR-EMITTER SATURATION VOLTAGE : VCE(sat) [V]
IC / IB = 20
Ta=25ºC -0.1
for
-0.1
ded -0.01 -1
Ta=125ºC 75ºC 25ºC
-40ºC
-10
-100 -1000 -10000
n s COLLECTOR CURRENT : IC [mA]
-0.01
-0.001 -1
IC / IB = 50 20
10
-10
-100 -1000 -10000
COLLECTOR CURRENT : IC [mA]
me sign Fig.7 Base-Emitter Saturation Voltage vs. Collector Current
m e -10
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
TRANSITION FREQUENCY : fT [MHz]
eco w D -1
100
t R Ne Ta= -40ºC
25ºC
o 75ºC 125ºC
IC / IB = 20 Pulsed
N-0.1
10
Ta=25ºC VCE= -10V
-1
-10
-100 -1000 -10000
10
100
1000
COLLECTOR CURRENT : IC [mA]
EMITTER CURRENT :IE [mA]
BASE-EMITTER SATURATION VOLTAGE : VBE(sat) [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/6
2013.05 - Rev.B
2SAR543D
Data Sheet
lElectrical characteristic curves(Ta = 25°C)
COLLECTOR OUTPUT CAPACITANCE : Cob [pF] EMITTER INPUT CAPACITANCE : Cib [pF]
COLLECTOR CURRENT : IC [A]
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage Collector output capacitance vs.
Fig.10 Safe Operating Area
Collector-Base Voltage
1000
-10
Ta=25ºC
Cib
f=1MHz IE=0A
r IC=0A
100
fo Cob
10
ded 1
-0.1
-1
-10
-100
n s COLLECTOR - BASE VOLTAGE : VCB [V] Not RecNoemwmDeesign EMITTER-BASE VOLTAGE:VEB[V]
1ms 10ms
-1
-0.1
DC
-0.01
DC Ta=25ºC (Mounted on a substrate)
Tc=25ºC
Single non repetitive pulse
-0.001
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
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