2SAR543R

Midium Power Transistors (-50V / -3A) 2SAR543R  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MR  Packaging specifications Type Package TSMT3 Code TL Basic ordering unit (pieces) 3000  Inner circuit (Unit : mm) (2) Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -50 -50 -6 -3 -6 0.5 1.0 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land *3 Mounted on a ceramic substrate（40400.7mm） Unit V V V A A W W °C °C (1) Base (2) Emitter (3) Collector (1) (3) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A 2SAR543R Electrical characteristics (Ta=25°C) Parameter Symbol Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE Transition frequency fT Min. -50 -50 -6 180 - Collector output capacitance Turn-on time Storage time Fall time * See switching time test cir...