2N5883

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2N5883 2N5884 DESCRIPTION ·With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO Collector-base voltage 2N5883 2N5884 VCEO Collector-emitter voltage 2N5883 2N5884 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -60 -80 -60 -80 -5 -25 -50 -7.5 200 200 -65~200 UNIT V V V A A A W VALUE 0.875 UNIT /W SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2N5883 2N5884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2N5883 2N5884 IC=-0.2A ;IB=0 -60 -80 V VCEsat-1 Collector-emitter saturation voltage IC=-15A; IB=-1.5A VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-6.25A VBEsat Base-emitter saturation voltage IC=-25A ;IB=-6.25A VBE Base-emitter on voltage IC=-10A ; VCE=-4V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 2N5883...