Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications.
ƽSimplifies Circuit Design ƽReduces Board Space ƽReduces Component Count ƽThe SC-89 Package can be Soldered using Wave or Reflow. ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel ƽThis is Pb-Free Device.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking Package
Shipping
LDTA123EET1G
6H
SC-89 (Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation TA = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
PD RθJA
200 (Note 1) 300 (Note 2) 1.6 (Note 1) 2.4 (Note 2)
400 (Note 2)
mW mW/°C °C/W
Junction and Storage Temperature Range
TJ, Tstg –55 to +150
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
LDTA123EET1
3
1 2
SC-89
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT)
PIN 2 EMITTER (GROUND)
MARKING DIAGRAM 3
XX M
12 xx = Specific Device Code M = Date Code
Version 1.0
LDTA123EET1-1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ICBO ICEO IEBO
V(BR)CBO V(BR)CEO
ON CHARACTERISTICS (Note 3) DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
hFE VCE(sat)
VOL VOH R1 R1/R2
250
200
Min
– – – 50 50
8.0 – – 4.9 1.5 0.8
PD, POWER DISSIPATION (MILLIWATTS)
150
100
50 0 −50
RqJA = 600°C/W
0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve
Typ – – – – –
15 – – – 2.2 1
150
LDTA123EET1
Max
Unit
100 nAdc 500 nAdc
2.3 mAdc
– Vdc – Vdc
–
0.25 0.2
– 2.9 1.2
Vdc Vdc Vdc kΩ
Version 1.0
LDTA123EET1-2/3
LESHAN RADIO COMPANY, LTD. LDTA123EET1
A -X-
3 12
B -Y- S
K
G
2 PL
D 3 PL
0.08 (0.003) M X Y
MN J
C
SC-89
-T-
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 1.50 1.60 1.70 0.059 0.063 0.067
B 0.75 0.85 0.95 0.030 0.034 0.040
C 0.60 0.70 0.80 0.024 0.028 0.031
D 0.23 0.28 0.33 0.009 0.011 0.013
G 0.50 BSC
0.020 BSC
H 0.53 REF
0.021 REF
J 0.10 0.15 0.20 0.004 0.006 0.008
K 0.30 0.40 0.50 0.012 0.016 0.020
L 1.10 REF
0.043 REF
M −−− −−− 10 _ −−− −−− 10 _ N −−− −−− 10 _ −−− −−− 10 _
S 1.50 1.60 1.70 0.059 0.063 0.067
HH
L
G RECOMMENDED PATTERN
OF SOLDER PADS
Version 1.0
LDTA123EET1-3/3
.