LDTA124EET1

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–89 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 50 50 Collector Current IC 100 Unit Vdc Vdc mAdc DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA124EET1 6B 22 22 3000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (Note 1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR–4 Board (Note 2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 × 1.0 Inch Pad LDTA124EET1 3 1 2 SC-89 1 BASE R1 R2 3 COLLECTOR 2 EMITTER Symbo...