2SK117

Apm JFET 2SK117 Low Noise Amplifier Applications Silicon N Channel Junction Type *High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.0dB(typ) (VDS=10V,ID=0.5mA,f=1kHz,RG=1k ) *High input impedance:IGSS=-1nA,VGS=-30V) Absolute Maximum rating at Ta=25 SYMBOL VGDS IG Tstg Tj PD PARAMETER Gate-Drain voltage Gate current storage temprature operating junction temperature Drain power dissipation 1:Drain 2:Gate 3:Source MIN. 30 10 -55 -55 300 MAX. +150 +125 123 TO-92 UNIT V mA mW Electrical Characteristics at Ta=25 SYMBOL PARAMETER CONDITIONS MIN IGSS Gate cut-off current VGS=-30V V(BR)GDS G-D breakdown voltage VDS=0,IG=-100uA -30 IDSS Drain current VDS=10V,VGS=0 1.2 VGS(off) G-S cut-off voltage VDS=10V,ID=0.1uA -0.2 Yfs Forward transfer admittance VDS=10V,VGS=0 f=1khz 4.0 Ciss Input capacitance VDS=10V,VGS=0 f=1Mhz Crss Reverse transfer capacitance VGD=-10V,ID=0,f=1Mhz NF(1) Noise figure VDS=10v,RG=1K NF(2) Noise figure ID=0.5mA,f=10Hz VDS=10v,RG=1K ID=0.5mA,f=1KHz Note:IDSS classification Y:1.2—3.0mA, GR:2.6—6.5mA, BL:6—14mA TYP 15 13 3 5 1 MAX -1.0 14 -1.5 10 2 UNIT nA V mA V mS pF pF dB dB 2005-03-20 1/3 Apm JFET 2SK117 Static characteristics (common source) ID(mA) 5 VGS=0 (V) 4 3 VGS=0.1 2 VGS=0.2 1 VGS=0.3 -0.4 –0.2 0 10 20 30 40 50 VGS(V) VDS(V) ID—VDS(low voltage region) ID(mA) 5 VGS=0 (V) 4 3 VGS=0.1 2 VGS=0.2 1 VGS=0.3 01 2 3 4 5 VDS(V) ID-VGS VGS(V) -1.2 -0.8 -0.4 ID(mA) 12 8 4 2 0 Yfs--ID Yfs(ms) 32 24...