DSCQ00100L

DSCQ001 Silicon NPN epitaxial planar type For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package  Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: C1  Packaging DSCQ00100L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Operating ambient temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Topr Tstg 60 50 7 100 200 100 150 –40 to +85 –55 to +150 Unit V V V mA mA mW °C °C °C 1: Base 2: Emitter 3: Collector Panasonic JEITA Code Unit: mm USSMini3-F1-B SC-116B SOT-923  Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO IC = 10 mA, IE = 0 IC = 2 mA, IB = 0 IE = 10 mA, IC = 0 60 50 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 210 460 Collector-e...