C5046

Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5046] 20.0 3.3 5.0 2.0 1.0 20.7 26.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C 2.0 3.4 1.2 1 23 5.45 5.45 2.8 0.6 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Conditions Ratings 1600 800 6 15 35 3.5 180 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) VCB=800V, IE=0 VCE=1600V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=12A, IB=3A IC=12A, IB=3A Ratings min typ 800 max 10 1.0 1.0 5 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s c...