BUZ103S

BUZ 103S SIPMOS Power Transistor Features N channel Enhancement mode Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current dv/dt rated 175 ˚C operating temperature VDS RDS(on) ID 55 0.036 31 V Ω A Type BUZ103S BUZ103S E3045A BUZ103S E3045 Package Ordering Code Packaging P-TO220-3-1 Q67040-S4009-A2 Tube P-TO263-3-2 Q67040-S4009-A6 Tape and Reel P-TO263-3-2 Q67040-S4009-A5 Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings at Tj = 25 ˚C unless otherwise specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100˚C ID Pulsed drain current IDpulse TC = 25 ˚C Avalanche energy, single pulse ID = 31 A, VDD = 25 V, RGS = 25 Ω EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 31 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C VGS Ptot Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg Value 31 22 124 140 7.5 6 ±20 75 -55... +175 55/175/56 Unit A mJ kV/µs V W ˚C Data Book 1 05.99 BUZ 103S Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 2 K/W - - 62 - - 62 - - 40 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Uni...