SMD Type
Low Frequency Transistor 2SB1386
Transistors
Features
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / ...
SMD Type
Low Frequency
Transistor 2SB1386
Transistors
Features
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type
PNP silicon
transistor
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms
Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg
Rating -30 -20 -6 -5 -10 0.5 150
-55 to +150
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
VCE(sat) IC=-4A,IB=-0.1A
hFE VCE=-2V, IC=-0.5A
Cob VCE=-6V, IE=50mA, f=30MHz
fT VCB=-20V, IE=0A, f=1MHz
Unit V V V A A W
Min Typ Max Unit -30 V -20 V -6 V
-0.5 ìA -0.5 ìA -1 V 82 390 120 MHz 60 pF
hFE Classification
Marking Rank hFE
P 82 180
BH Q 120 270
R 180 390
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