PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot...
PNP SILICON PLANAR
MEDIUM POWER
TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt
ZTX550 ZTX551
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25°C
derate above 25°C Operating and Storage Temperature Range
SYMBOL VCBO VCEO VEBO ICM IC Ptot
Tj:Tstg
E-Line TO92 Compatible
ZTX550 ZTX551 -60 -80 -45 -60 -5 -2 -1 1 5.7 -55 to +200
UNIT V V V A A W
mW/ °C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
ZTX550
ZTX551
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -60
Breakdown Voltage
-80
Collector-Emitter
VCEO(sus) -45
Sustaining Voltage
-60
Emitter-Base
V(BR)EBO -5
Breakdown Voltage
-5
Collector Cut-Off Current
ICBO
-0.1 -0.1
Emitter Cut-Off Current
IEBO
-0.1 -0.1
Collector-Emitter
VCE(sat)
Saturation Voltage
-0.25
-0.35
UNIT
V
V
V
µA µA µA V
CONDITIONS.
IC=-100µA IC=-10mA* IE=-100µA VCB=-45V VCB=-60V VEB=-4V IC=-150mA, IB=-15mA*
Base-Emitter
VBE(sat)
Saturation Voltage
-1.1
-1.1 V
IC=-150mA,
IB=-15mA*
Static Forward Current Transfer Ratio
hFE
100 300 50 15 10
150
IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V*
Transition Frequency
fT 150 150 MHz IC=-50mA, VCE=-10V f=100MHz
3-194
VCE(sat) - (Volts)
TYPICAL CHARACTERISTICS
ZTX550 ZTX551
-0.8
-0.6 ZTX550
-0.4 IC/IB=10
-0.2
ZTX551
0
-0.01
-0.1
-1
-10
IC - Collector Current (Amps)
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