Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
1 BASE
R1 R2
DTC114EE Series
COLLECTOR 3
2 EMITTER
1 2
3
S...
Bias Resistor
Transistor NPN Silicon
P b Lead(Pb)-Free
1 BASE
R1 R2
DTC114EE Series
COLLECTOR 3
2 EMITTER
1 2
3
SC-89 (SOT-523F)
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
VCEO VCBO
Collector Current-Continuous
IC
Value 50
50
100
Unit V V
mA
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board FR-4 Board(1) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(1)
Total Device Dissipation FR-5 Board FR-4 Board(2) TA=25˚C Derate above 25˚C
Thermal Resistance, Junction to Ambient(2)
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad 2.FR-4 @1.0 x 1.0 Inch pad
Symbol
PD RθJA
PD RθJA TJ Tstg
Max
200 1.6 600
300 2.4 400 -55 to +150 -55 to +150
Unit
mW mW/ ˚C
˚C/W
mW mW/ ˚C
˚C/W ˚C ˚C
Device Marking and ResistorValues
Device
DTC114EE
DTC124EE DTC144EE DTC114YE DTC114TE DTC143TE
Marking
8A
8B 8C 8D 94 8F
R1(K)
10
22 47 10 10 4.7
88
R2(K)
10 22 47 47
Device
DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE DTC115EE DTC144WE
Marking
8H 8J 8K 8L 8M 8N 8P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100 22
WEITRON
http://www.weitron.com.tw
1/13
12-Jun-06
DTC114EE Series
WEITRON
Electrical Characteristics (TA=25˚C Unless Otherwise noted)
Characteristics
Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) IC=2.0mA, IB=0 Collector-Base Breakdown Voltage IC=10µA, IE=0
Collector-Base Cutoff Volt...