CJF44H11

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CJF44H11 NPN CJF45H11 PNP TO-220FP Fully Isolated Plastic Package General Purpose Power Amplification and Switching such as Output or Driver Stages in Applications ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage Emitter Base Voltage RMS Isolation Voltage ( for 1sec,R.H. <30%, TA=25ºC ) Collector Current -Continuous - Peak Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VCEO VEBO (1) VISOL (a) (b) IC PD PD Tj,Tstg 80 5 3500 1500 10 20 50 1.67 2 0.016 - 55 to +150 V V VRMS VRMS A A W W/ºC W W/ºC ºC THERMAL RESISTANCE From Junction to Ambient From Junction to Case Rth (j-a) Rth (j-c) 62.5 3.5 ºC/W ºC/W (1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%) ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter sustaining Voltage Collector Cut off Current Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCEO (sus) ICES IEBO VCE(Sat) VBE(Sat) hFE IC=30mA, IB=0 VCE=Rated VCEO, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A...