Power MOSFET
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•ăPlanar HD3e Process for Fast Switching Performance •ăLow ...
Description
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
ăPlanar HD3e Process for Fast Switching Performance ăLow RDS(on) to Minimize Conduction Loss ăLow CISS to Minimize Driver Loss ăLow Gate Charge ăPb-Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms)
Thermal Resistance - Junction-to-Ambient ą(Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C
Thermal Resistance - Junction-to-Ambient ą(Note2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VGS
RqJC PD
ID ID ID IDM
RqJA
PD ID
RqJA
PD ID
TJ, Tstg
25
±20
2.4 62.5
Vdc
Vdc
°C/W W
72.0 A 62.8 A 32 A 140 A
80 °C/W
1.87 W 12.0 A
110 °C/W
1.36 10.0
-55 to 175
W A
°C
Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s
EAS 71.7 mJ TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not impli...
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