NTD70N03R

NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features ăPlanar HD3e Process for Fast Switching Performance ăLow RDS(on) to Minimize Conduction Loss ăLow CISS to Minimize Driver Loss ăLow Gate Charge ăPb-Free Packages are Available MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms) Thermal Resistance - Junction-to-Ambient ą(Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Thermal Resistance - Junction-to-Ambient ą(Note2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Operating and Storage Temperature Range VDSS VGS RqJC PD ID ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg 25 ±20 2.4 62.5 Vdc Vdc °C/W W 72.0 A 62.8 A 32 A 140 A 80 °C/W 1.87 W 12.0 A 110 °C/W 1.36 10.0 -55 to 175 W A °C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s EAS 71.7 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not impli...