SEMICONDUCTOR
TECHNICAL DATA
KF5N53DZ/DS
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe...
SEMICONDUCTOR
TECHNICAL DATA
KF5N53DZ/DS
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 525V, ID= 4.1A Drain-Source ON Resistance : RDS(ON)=1.5 Qg(typ) = 12nC
(Max) @VGS = 10V
trr(typ) = 150ns (KF5N53DS) trr(typ) = 300ns (KF5N53DZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 525 30 4.1 2.6 13 270
8.6
20 59.5 0.48 150 -55 150
2.1 110
www.ckb-sh.com
UNIT V V
A
mJ mJ V/ns W W/
/W /W
A CD
B
H G
FF
J E
123
O
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
PIN CONNECTION (KF5N53DZ/DS)
D
G S
2011. 3. 16
Revis...