Document
BC846,BC847,BC848,BC849,BC850 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE 30/45/65 Volts CURRENT 225 mWatts
FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram
D evice M arking: BC 846A=46A BC 847A=47A BC 848A=48A BC 846B=46B BC 847B=47B BC 848B=48B BC 849B=49B BC 850B=50B
BC 847C =47C BC 848C =48C BC 849C =49C BC 850C =50C
ABSOLUTE RATINGS
PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous
BC846 BC847,BC850 BC848,BC849
BC846 BC847,BC850 BC848,BC849
BC846 BC847,BC850 BC848,BC849
Symbol VCEO VCBO VEBO IC
THERMAL CHARACTERISTICS
PARAM ETER M ax PowerD issipation (Note 1) Therm alResistance ,Junction to Am bient Junction Tem perature Storage Tem perature
Sym bol P TO T R θJA TJ TIS TG
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0.3-FEB.10.2009
Value 65 45 30 80 50 30 6.0 6.0 5.0 100
Value
225
556
-55 to 150
-55 to 150
Units V V V mA
U nits mW O C /W OC OC
PAGE . 1
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS
PARAMETER
BC846A/B Collector - Emitter Breakdown Voltage BC847A/B/C,BC850B/C
BC848A/B/C,BC849B/C
Collector - Base Breakdown Voltage
BC846A/B BC847A/B/C,BC850B/C BC848A/B/C,BC849B/C
Emitter - Base Breakdown Voltage
BC846A/B BC847A/B/C,BC850B/C BC848A/B/C,BC849B/C
Symbol
Test C ondi ti on
V (BR)C E O IC=1.0mA , IB =0
V(BR)CBO IC=10uA, IE=0
V(BR)EBO IE=10uA, IC=0
Emitter-Base Cutoff Current
IEBO VEB=5
Collector-Base Cutoff Current
DC Current Gain DC Current Gain
BC846~BC848 Suffix "A" BC846~BC850 Suffix "B" BC847~BC850 Suffix "C"
BC846~BC848 Suffix "A" BC846~BC850 Suffix "B" BC847~BC850 Suffix "C"
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter Voltage
IC B O
VCB=30V, IE=0 VCB=30V, IE=0,TJ=150OC
hF E IC=10uA, VCE=5V
hF E IC=2.0mA, VCE=5V
V C E(SAT)
IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA
V B E (S AT)
IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA
V B E (S AT)
IC=2mA, VCE=5.0V IC=10mA, VCE=5.0V
Collector - Base Capacitance
CCBO VCB=10V, IE=0, f=1MH
MIN. 65 45 30 80 50 30 6.0 6.0 5.0
-
-
-
110 200 420
-
-
0.58 -
-
TYP. MAX. Uni ts - -V
- -V
- -V
-
-
90 150 270
180 290 520
-
0.7 0.9 0.660 -
-
100
15 5.0
-
220 450 800 0.25 0.6
-
0.70 0.77
4.5
nA nA uA -
-
V V V pF
NPN
REV.0.3-FEB.10.2009
PAGE . 2
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A,BC848A)
ICB0, Collector Current (nA)
VBE(ON), (mV)
100 VCB=30V
10
1
0 25 50 75 100 125 150
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000 800 600
TJ = 100 ˚C
TJ = 25 ˚C
400 200 TJ = 150 ˚C
VCE=5V
0 0.01
0.1
1
10 100 1000
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
1000 800 600
TJ = 100 ˚C
TJ = 25 ˚C
400
200 TJ = 150 ˚C
IC/IB=20
0 0.01
0.1 1 10 Collector Current, IC (mA)
100
Fig. 5. Typical VBE(SAT) vs. Collector Current
VCE(sat), (mV) hFE Capacitance, C (pF)
300 TJ=150˚ C
250
TJ=100˚ C 200
150 TJ=25 C 100
50 VCE=5V
0 0.01
0.1 1 10 100 Collector Current, IC (mA)
1000
Fig. 2. Typical hFE vs. Collector Current
1000
TJ = 100 ˚C 100 TJ = 150 ˚C
TJ = 25 ˚C
IC/IB=20
10
0.01
0.1
1
10 100 1000
Collector Current, IC (mA)
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
Cib (EB)
TJ = 25 ˚C
Cob (CB)
1 0.1 1 10 100 Reverse Voltage (V)
Fig. 6. Typical Capacitances vs. Reverse Voltage
VBE(sat), (mV)
REV.0.3-FEB.10.2009
PAGE . 3
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICA5L CHARACTERISTICS CURVE (BC846B,BC847B,BC848B,BC849B,BC850B)
ICB0, Collector Current (nA)
VBE(ON), (mV)
100 VCB=30V
10
1
0 25 50 75 100 125 150 Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
1200
1000 800 600
TJ = 100 ˚C
TJ = 25 ˚C
400
200 TJ = 150 ˚C
VCE=5V
0 0.01
0.1
1
10 100 1000
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
1200
1000 800 600
TJ = 100 ˚C
TJ = 25 ˚C
400
200 TJ = 150 ˚C
IC/IB=20
0 0.01
Fig. 5.
0.1 1
10 100
Collector Current, IC (mA)
Typical VBE(SAT) vs. Collector Current
V , (mV) CE(sat)
hFE
Capacitance, C (pF)
500 450 400 350 300 250 200 150 100
50 0 0.01
TJ=150˚ C TJ=100˚ C TJ=25 ˚C
VCE=5V
0.1 1 10 100 Collector Current, IC (mA)
1000
Fig. 2. Typical hFE vs. Collector Current
1000
TJ = 100 ˚C 100 TJ = 150 ˚C
TJ = 25 ˚C
IC/IB=20
10 0.01
Fig. 4.
0.1 1 10 100 1000 Collector Current, IC (mA)
Typical VCE(SAT) vs. Collector Current
10
Cib (EB)
TJ = 25 ˚C
Cob (CB)
1 0.1
Fig. 6.
1 10 100
Reverse Voltage (V)
Typical Capacitances vs. Reverse Voltage
VBE(sat), (mV)
REV.0.3-FEB.10.2009
PAGE . 4
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C)
ICB0, Collector Current (nA.