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BC848 Dataheets PDF



Part Number BC848
Manufacturers Pan Jit International
Logo Pan Jit International
Description NPN GENERAL PURPOSE TRANSISTORS
Datasheet BC848 DatasheetBC848 Datasheet (PDF)

BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram D evice M arking: BC 846A=46A BC 847A=47A BC 848A=48A BC 846B=46B BC 847B=47B BC 848B=48B BC 849B=49.

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BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts CURRENT 225 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram D evice M arking: BC 846A=46A BC 847A=47A BC 848A=48A BC 846B=46B BC 847B=47B BC 848B=48B BC 849B=49B BC 850B=50B BC 847C =47C BC 848C =48C BC 849C =49C BC 850C =50C ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous BC846 BC847,BC850 BC848,BC849 BC846 BC847,BC850 BC848,BC849 BC846 BC847,BC850 BC848,BC849 Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS PARAM ETER M ax PowerD issipation (Note 1) Therm alResistance ,Junction to Am bient Junction Tem perature Storage Tem perature Sym bol P TO T R θJA TJ TIS TG Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. REV.0.3-FEB.10.2009 Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Value 225 556 -55 to 150 -55 to 150 Units V V V mA U nits mW O C /W OC OC PAGE . 1 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS PARAMETER BC846A/B Collector - Emitter Breakdown Voltage BC847A/B/C,BC850B/C BC848A/B/C,BC849B/C Collector - Base Breakdown Voltage BC846A/B BC847A/B/C,BC850B/C BC848A/B/C,BC849B/C Emitter - Base Breakdown Voltage BC846A/B BC847A/B/C,BC850B/C BC848A/B/C,BC849B/C Symbol Test C ondi ti on V (BR)C E O IC=1.0mA , IB =0 V(BR)CBO IC=10uA, IE=0 V(BR)EBO IE=10uA, IC=0 Emitter-Base Cutoff Current IEBO VEB=5 Collector-Base Cutoff Current DC Current Gain DC Current Gain BC846~BC848 Suffix "A" BC846~BC850 Suffix "B" BC847~BC850 Suffix "C" BC846~BC848 Suffix "A" BC846~BC850 Suffix "B" BC847~BC850 Suffix "C" Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage IC B O VCB=30V, IE=0 VCB=30V, IE=0,TJ=150OC hF E IC=10uA, VCE=5V hF E IC=2.0mA, VCE=5V V C E(SAT) IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA V B E (S AT) IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA V B E (S AT) IC=2mA, VCE=5.0V IC=10mA, VCE=5.0V Collector - Base Capacitance CCBO VCB=10V, IE=0, f=1MH MIN. 65 45 30 80 50 30 6.0 6.0 5.0 - - - 110 200 420 - - 0.58 - - TYP. MAX. Uni ts - -V - -V - -V - - 90 150 270 180 290 520 - 0.7 0.9 0.660 - - 100 15 5.0 - 220 450 800 0.25 0.6 - 0.70 0.77 4.5 nA nA uA - - V V V pF NPN REV.0.3-FEB.10.2009 PAGE . 2 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC846A,BC847A,BC848A) ICB0, Collector Current (nA) VBE(ON), (mV) 100 VCB=30V 10 1 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 800 600 TJ = 100 ˚C TJ = 25 ˚C 400 200 TJ = 150 ˚C VCE=5V 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 1000 800 600 TJ = 100 ˚C TJ = 25 ˚C 400 200 TJ = 150 ˚C IC/IB=20 0 0.01 0.1 1 10 Collector Current, IC (mA) 100 Fig. 5. Typical VBE(SAT) vs. Collector Current VCE(sat), (mV) hFE Capacitance, C (pF) 300 TJ=150˚ C 250 TJ=100˚ C 200 150 TJ=25 C 100 50 VCE=5V 0 0.01 0.1 1 10 100 Collector Current, IC (mA) 1000 Fig. 2. Typical hFE vs. Collector Current 1000 TJ = 100 ˚C 100 TJ = 150 ˚C TJ = 25 ˚C IC/IB=20 10 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 4. Typical VCE(SAT) vs. Collector Current 10 Cib (EB) TJ = 25 ˚C Cob (CB) 1 0.1 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. Reverse Voltage VBE(sat), (mV) REV.0.3-FEB.10.2009 PAGE . 3 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICA5L CHARACTERISTICS CURVE (BC846B,BC847B,BC848B,BC849B,BC850B) ICB0, Collector Current (nA) VBE(ON), (mV) 100 VCB=30V 10 1 0 25 50 75 100 125 150 Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature 1200 1000 800 600 TJ = 100 ˚C TJ = 25 ˚C 400 200 TJ = 150 ˚C VCE=5V 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current 1200 1000 800 600 TJ = 100 ˚C TJ = 25 ˚C 400 200 TJ = 150 ˚C IC/IB=20 0 0.01 Fig. 5. 0.1 1 10 100 Collector Current, IC (mA) Typical VBE(SAT) vs. Collector Current V , (mV) CE(sat) hFE Capacitance, C (pF) 500 450 400 350 300 250 200 150 100 50 0 0.01 TJ=150˚ C TJ=100˚ C TJ=25 ˚C VCE=5V 0.1 1 10 100 Collector Current, IC (mA) 1000 Fig. 2. Typical hFE vs. Collector Current 1000 TJ = 100 ˚C 100 TJ = 150 ˚C TJ = 25 ˚C IC/IB=20 10 0.01 Fig. 4. 0.1 1 10 100 1000 Collector Current, IC (mA) Typical VCE(SAT) vs. Collector Current 10 Cib (EB) TJ = 25 ˚C Cob (CB) 1 0.1 Fig. 6. 1 10 100 Reverse Voltage (V) Typical Capacitances vs. Reverse Voltage VBE(sat), (mV) REV.0.3-FEB.10.2009 PAGE . 4 BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C) ICB0, Collector Current (nA.


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