Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6489 2N6490 2N6491
DESCRIPTION With TO-22...
Inchange Semiconductor
Silicon
PNP Power
Transistors
Product Specification
2N6489 2N6490 2N6491
DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487
2N6488 respectively
APPLICATIONS Power amplifier and medium speed
switching applications
PINNING PIN
DESCRIPTION
1 Emitter
2
Collector;connected to mounting base
3 Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6489
VCBO
Collector-base voltage 2N6490
2N6491
2N6489
VCEO
Collector-emitter voltage 2N6490
2N6491
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter
Open base Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE -50 -70 -90 -40 -60 -80 -5 -15 -5 75 150
-65~150
UNIT
V
V
V A A W
MAX 1.67
UNIT /W
Inchange Semiconductor
Silicon
PNP Power
Transistors
Product Specification
2N6489 2N6490 2N6491
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
2N6489 2N6490 IC=-0.2A ;IB=0 2N6491
VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A
VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-5A
VBE-1
Base-emitter on voltage
IC=-5A ; VCE=-4V
VBE-2 ICEX
ICEO
Base-emitter on voltage
2N6489
Collector cut-off current VBE=-1.5V
2N6490...