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SS8550 Dataheets PDF



Part Number SS8550
Manufacturers TGS
Logo TGS
Description PNP Transistor
Datasheet SS8550 DatasheetSS8550 Datasheet (PDF)

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERIS.

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TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 Emitter cut-off current ICEO VCE=-20V, IE=0 Emitter cut-off current IEBO VEB=-5V, IC=0 DC current gain hFE(1) hFE(2) VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA Out capacitance Cob VCB=-10V, IE=0mA,f=1MHZ Transition frequency fT VCE=-10V, IC=-50mA,f=30MHZ Min Typ Max Unit -40 V -25 V -5 V -0.1 μA -0.1 μA -0.1 uA 85 400 40 -0.5 V -1.2 V -1 V 20 pF 100 MHz CLASSIFICATION OF hFE(2) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 B,Sep,2011 Typical Characteristics SS8550 COLLECTOR CURRENT IC (mA) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) -250 COMMON EMITTER Ta=25℃ -200 -150 -100 -50 Static Characteristic -1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0 -0 -1000 β=10 IB=-0.1mA -1 -2 COLLECTOR-EMITTER VOLTAGE VCE (V) -3 V —— I CEsat C -300 -100 -30 Ta=100℃ -10 Ta=25℃ -3 -1 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1500 -1000 COMMON EMITTER VCE=-1V I —— V C BE -300 Ta=25℃ -100 -1000-1500 -30 Ta=100℃ -10 -3 -1 -0.2 -0.4 -0.6 -0.8 BASE-EMITTER VOLTAGE VBE (V) f —— I 1000 TC COMMON EMITTER VCE= -10V Ta=25℃ 300 -1.0 100 30 10 -2 -6 -10 -30 COLLECTOR CURRENT I (mA) C -100 COLLECTOR POWER DISSIPATION PC (W) CAPACITANCE C (pF) BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) DC CURRENT GAIN hFE 1000 300 100 h —— I FE C Ta=100℃ Ta=25℃ 30 10 -1 -3 -1.2 β=10 COMMON EMITTER VCE=-1V -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1000-1500 V —— I BEsat C -1.0 -0.8 Ta=25℃ -0.6 Ta=100℃ -0.4 -0.2 -1 100 -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1000-1500 C / C —— V / V ob ib CB EB f=1MHz IE=0/IC=0 Ta=25℃ Cib 30 Cob 10 -0.1 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 -0.3 -1 -3 -10 -20 REVERSE BIAS VOLTAGE V (V) P —— T Ca 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a B,Sep,2011 COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) .


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