Document
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES Power dissipation PC : 1 W (Ta=25 ℃)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1. EMITTER 2. BASE 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
ICEO
VCE=-20V, IE=0
Emitter cut-off current
IEBO VEB=-5V, IC=0
DC current gain
hFE(1) hFE(2)
VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE(on) VCE=-1V, IC=-10mA
Out capacitance
Cob VCB=-10V, IE=0mA,f=1MHZ
Transition frequency
fT VCE=-10V, IC=-50mA,f=30MHZ
Min Typ Max Unit -40 V -25 V -5 V
-0.1 μA -0.1 μA -0.1 uA 85 400 40 -0.5 V -1.2 V -1 V 20 pF 100 MHz
CLASSIFICATION OF hFE(2)
Rank Range
B
85-160
C
120-200
D
160-300
D3
300-400
B,Sep,2011
Typical Characteristics
SS8550
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV)
-250
COMMON EMITTER Ta=25℃
-200
-150
-100
-50
Static Characteristic
-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA
-0 -0
-1000
β=10
IB=-0.1mA
-1 -2
COLLECTOR-EMITTER VOLTAGE VCE (V)
-3
V —— I
CEsat
C
-300
-100
-30 Ta=100℃ -10 Ta=25℃
-3
-1 -1 -3
-10 -30
-100
-300
COLLECTOR CURRENT IC (mA)
-1500 -1000
COMMON EMITTER VCE=-1V
I —— V
C BE
-300
Ta=25℃
-100
-1000-1500
-30
Ta=100℃
-10
-3
-1 -0.2
-0.4 -0.6 -0.8
BASE-EMITTER VOLTAGE VBE (V)
f —— I
1000
TC
COMMON EMITTER VCE= -10V Ta=25℃
300
-1.0
100
30
10 -2
-6 -10
-30
COLLECTOR CURRENT I (mA) C
-100
COLLECTOR POWER DISSIPATION PC (W)
CAPACITANCE C (pF)
BASE-EMMITTER SATURATION VOLTAGE VBEsat (V)
DC CURRENT GAIN hFE
1000 300 100
h —— I FE C
Ta=100℃ Ta=25℃
30
10 -1
-3
-1.2
β=10
COMMON EMITTER VCE=-1V
-10 -30
-100
-300
COLLECTOR CURRENT IC (mA)
-1000-1500
V —— I
BEsat
C
-1.0
-0.8
Ta=25℃
-0.6 Ta=100℃
-0.4
-0.2 -1
100
-3
-10 -30
-100
-300
COLLECTOR CURRENT IC (mA)
-1000-1500
C / C —— V / V
ob ib
CB EB
f=1MHz IE=0/IC=0 Ta=25℃
Cib
30 Cob
10 -0.1
1.2 1.0 0.8 0.6 0.4 0.2 0.0
0
-0.3 -1 -3 -10 -20
REVERSE BIAS VOLTAGE V (V)
P —— T Ca
25 50 75 100 125 150
AMBIENT TEMPERATURE T (℃) a B,Sep,2011
COLLECTOR CURRENT IC (mA)
TRANSITION FREQUENCY fT (MHz)
.