SS8550

Elektronische Bauelemente SS8550 PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C Collector 3 2 Emitter 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat) VBE(sat)1 *hFE1 *hFE2 fT COB Min. -40 -25 -5 120 40 100 - Typ. - Max. -0.1 -0.1 -0.1 0.5 1.2 350 20 Unit V V V μA μA μA V V MHz pF Test Conditions Ic = 100μA, IE = 0 Ic = -0.1mA, IB = 0 IE = -100μA, IC = 0 VCB = -40 V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 IC = -800 mA, IB = -80mA IC = -800 mA, IB = -80mA VCE= -1V, IC=-100mA VCE = -1V, IC = -800mA VCE = -10V, IC = -50mA, f = 30MHz VCB= -10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) Rank L Range 120 - 200 Marking H 200-350 Y2 J 300-400 01-June-2005 Rev. B Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES SS8550 PNP Silicon General Purpose Transistor 01-June-2005 Rev. B Page 2 of 2 ...