Document
SS8 550
TRANSISTOR(PNP)
FEATURES High Collector Current Complementary to SS8050
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-1.5
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj Junction Temperature Tstg Storage Temperature
150 -55~+150
Unit V V V A
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1) hFE(2)
VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE VCE=-1V, IC=-10mA
Transition frequency
fT VCE=-10V,IC=-50mA , f=30MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK RANGE MARKING
L 120–200
H 200–350
Y2
Min Typ Max Unit -40 V
-25 V
-5 V
-100
nA
-100
nA
-100
nA
120 400
40
-0.5 V
-1.2 V
-1 V
100 MHz
20 pF
J 300–400
JinYu
semiconductor
www.htsemi.com
COLLECTOR CURRENT IC (mA)
BASE-EMITTER SATURATION VOLTAGE VBEsat (mV)
Static Characteristic
-180 1mA
-160 0.9mA
-140 0.8mA
-120 0.7mA
-100 0.6mA
0.5mA -80
0.4mA -60
0.3mA
-40 0.2mA
-20 IB=0.1mA
-0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
-1000
V —— BEsat
I
C
-900
-800
Ta=25℃
-700
-600
-500 Ta=100℃
-400
-300 -200
-0.1
-1000
-1 -10 -100
COLLECTOR CURRENT IC (mA)
V —— I BE C
β=10
-1000
-100
Ta=100 oC
-10
Ta=25℃
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
DC CURRENT GAIN hFE
h FE
——
I
C
500
Ta=100℃
Ta=25℃
100
10 -0.1
-1000
-1 -10 -100
COLLECTOR CURRENT IC (mA)
V —— CEsat
I
C
VCE=-1V
-1000
-100
Ta=100℃ Ta=25℃
-10
-1 0.2
100
-1 -10 -100
COLLECTOR CURRENT IC (mA)
C /C ob ib
——
V /V CB EB
Cib
β=10
-1000
f=1MHz IE=0/ IC=0 Ta=25 oC
C ob
CAPACITANCE C (pF)
COLLCETOR CURRENT IC (mA)
-1
TRANSITION FREQUENCY fT (MHz)
-0.1 -200
500
VCE=-1V
-300
-400
-500
-600
-700
-800
-900
-1000
BASE-EMMITER VOLTAGE VBE (mV)
fT
——
I
C
100
VCE-10V
10 -1
Ta=25 oC
-10 -100
COLLECTOR CURRENT IC (mA)
COLLECTOR POWER DISSIPATION Pc (mW)
1 -0.2
350 300 250 200 150 100
50 0 0
JinYu
semiconductor
www.htsemi.com
-1 -10 20
REVERSE VOLTAGE V (V)
Pc —— Ta
25 50 75 100 125
AMBIENT TEMPERATURE Ta (℃)
150
.