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SS8550 Dataheets PDF



Part Number SS8550
Manufacturers Jin Yu Semiconductor
Logo Jin Yu Semiconductor
Description PNP Transistor
Datasheet SS8550 DatasheetSS8550 Datasheet (PDF)

SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 417 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER .

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SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 417 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 Collector cut-off current ICBO VCB=-40V, IE=0 Collector cut-off current ICEO VCE=-20V, IB=0 Emitter cut-off current IEBO VEB=-5V, IC=0 DC current gain hFE(1) hFE(2) VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA Base-emitter voltage VBE VCE=-1V, IC=-10mA Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING L 120–200 H 200–350 Y2 Min Typ Max Unit -40 V -25 V -5 V -100 nA -100 nA -100 nA 120 400 40 -0.5 V -1.2 V -1 V 100 MHz 20 pF J 300–400 JinYu semiconductor www.htsemi.com COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Static Characteristic -180 1mA -160 0.9mA -140 0.8mA -120 0.7mA -100 0.6mA 0.5mA -80 0.4mA -60 0.3mA -40 0.2mA -20 IB=0.1mA -0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 COLLECTOR-EMITTER VOLTAGE VCE (V) -1000 V —— BEsat I C -900 -800 Ta=25℃ -700 -600 -500 Ta=100℃ -400 -300 -200 -0.1 -1000 -1 -10 -100 COLLECTOR CURRENT IC (mA) V —— I BE C β=10 -1000 -100 Ta=100 oC -10 Ta=25℃ COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) DC CURRENT GAIN hFE h FE —— I C 500 Ta=100℃ Ta=25℃ 100 10 -0.1 -1000 -1 -10 -100 COLLECTOR CURRENT IC (mA) V —— CEsat I C VCE=-1V -1000 -100 Ta=100℃ Ta=25℃ -10 -1 0.2 100 -1 -10 -100 COLLECTOR CURRENT IC (mA) C /C ob ib —— V /V CB EB Cib β=10 -1000 f=1MHz IE=0/ IC=0 Ta=25 oC C ob CAPACITANCE C (pF) COLLCETOR CURRENT IC (mA) -1 TRANSITION FREQUENCY fT (MHz) -0.1 -200 500 VCE=-1V -300 -400 -500 -600 -700 -800 -900 -1000 BASE-EMMITER VOLTAGE VBE (mV) fT —— I C 100 VCE-10V 10 -1 Ta=25 oC -10 -100 COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) 1 -0.2 350 300 250 200 150 100 50 0 0 JinYu semiconductor www.htsemi.com -1 -10 20 REVERSE VOLTAGE V (V) Pc —— Ta 25 50 75 100 125 AMBIENT TEMPERATURE Ta (℃) 150 .


SS8550 SS8550 PMSTA42


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