SMD Type
Features
SOT-23 package
Driver Transistors MMBTA55,MMBTA56
TransistIoCrs
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0...
SMD Type
Features
SOT-23 package
Driver
Transistors MMBTA55,MMBTA56
TransistIoCrs
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board(* 1) Derate above 25 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature
* 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol VCEO VCBO VEBO IC
PD
RèJA
PD
RèJA Tj Tstg
MMBTA55 MMBTA56 -60 -80 -60 -80 -4.0 -500 225 1.8 556 300 2.4 417 150 -55 to +150
Unit
V
V
V
mA mW mW/
/W mW mW/
/W
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SMD Type
TransistIoCrs
MMBTA55,MMBTA56
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-emitter breakdown voltage* MMBTA55 V(BR)CEO IC = -1.0 mA, IB = 0
MMBTA56
-60 -80
Emitter-base breakdown voltage
V(BR)EBO IE = -100 ìA, IC = 0
-4.0
Base cutoff current
ICES VCE = -60 V, IB = 0
Collector cutoff current
MMBTA55 MMBTA56
ICBO
VCB = -60 V, IE = 0 VCB = -80 V, IE = 0
DC current gain
IC = -10 mA, VCE = -1.0 V HFE
IC = -100 mA, VCE = -1.0 V
100 100
Collector-emitter saturation voltage
VCE(sat) IC = -100 mA, IB = -10 m...