RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FMMT4124
FEATURES
* Power di...
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR
TRANSISTORS
TRANSISTOR(
NPN)
FMMT4124
FEATURES
* Power dissipation
PCM :
0.33
W (Tamb=25OC)
* Collector current
ICM :
0.2 A
* Collector-base voltage
V(BR)CBO : 30
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Collector-base breakdown voltage (IC= 10mA, IE=0)
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0)
V(BR)CEO V(BR)EBO
Collector cut-off current (VCB= 20V, IE=0)
ICBO
DC current gain (VEB= 3V, IC= 0)
IEBO
Collector-emitter saturation voltage (VCE= 1V, IC= 2mA) Base-emitter saturation voltage (IC= 50mA, IB= 5mA)
hFE VCE(sat)
Base-emitter voltage ((IC= 50mA, IB= 5mA)
VBE(sat)
Transition frequency (VCE= 20V, IC= -10mA, f=100MHZ)
fT
Marking Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
COLLECTOR 3
BASE 1
2 EMITTER
0.006(0.15) 0.003(0.08)
0.055(1.40) 0.047(1.20)
0.020(0.50) 0.012(0.30)
0.043(1.10) 0.035...