TSM038N03

TSM038N03 Taiwan Semiconductor N-Channel Power MOSFET 30V, 80A, 3.8mΩ FEATURES ● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Mobile device DC-DC conversion ● Point of Load (POL) DC-DC ● Secondary Switch Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) VGS =10V 3.8 mΩ VGS =4.5V 5.5 Qg 24 nC PDFN33 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Single Pulsed Avalanche Energy (Note 3) Single Pulsed Avalanche Current (Note 3) Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS IAS PDTOT TJ, TSTG 30 ±20 80 51 320 125 50 66 - 55 to +150 UNIT V V A A mJ A W °C THERMAL PERFORMANCE PARAMETER Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance SYMBOL RӨJc RӨJA LIMIT 2 62 UNIT oC/W oC/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000163 1 Version: A15 T...