HY5N50T

HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives Mechanical Information Case: TO-220AB / ITO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 TO-220AB 1 2 3 ITO-220AB 12 3 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY5N50T 5N50T TO-220AB 50PCS/TUBE HY5N50FT 5N50FT ITO-220AB 50PCS/TUBE 1 Gate 3 Source Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY5N50T HY5N50FT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS +30 Continuous Drain Current TC=25℃ ID 5 5 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=5A, VDD=95V, L=11mH Operating Junction and Storage Temperature Range IDM PD EAS TJ, TSTG 20 71 0.57 20 27 0.22 135 -55 to +150 Units V V A A W mJ ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Junction-to-Case Thermal Resistance Junction-to-Case Thermal Resistance Symbol RqJC RqJA HY5N50T 1.76 50 HY5N50FT 4.6 110 Units ℃/W ℃/W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.0, 24-Sept-2012 PAGE.1 H...