AS4C16M16D1

AS4C16M16D1 16M x 16 bit DDR Synchronous DRAM (SDRAM) Alliance Memory Confidential Advanced (Rev. 1.1, Sep. /2011) Features  Fast clock rate: 200MHz  Differential Clock CK & CK  Bi-directional DQS  DLL enable/disable by EMRS  Fully synchronous operation  Internal pipeline architecture  Four internal banks, 4M x 16-bit for each bank  Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved  Individual byte-write mask control  DM Write Latency = 0  Auto Refresh and Self Refresh  8192 refresh cycles / 64ms  Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)  Precharge & active power down  Power supplies: VDD & VDDQ = 2.5V  0.2V  Interface: SSTL_2 I/O Interface  Package: 66 Pin TSOP II, 0.65mm pin pitch - Pb free and Halogen free  Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free Overview The AS4C16M16D1 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 256 Mbits. It is internally configured as a quad 4M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK .d Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then...