Document
Photocouplers Infrared LED & Photo Transistor
TLP383
TLP383
1. Applications
• Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards
2. General
TLP383 is a photocoupler of low input and high isolation type that consists of phototransistor optically coupled to infrared LED in a 4-pin SO6L package. TLP383 is guaranteed high isolation voltage (5000 Vrms) and wide operating temperature (Ta = -55 to 125 ). Since TLP383 has a small and thin package compared with a standard DIP package, it is suitable for high-density surface mounting applications such as programmable controllers.
3. Features
(1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min)
GB Rank: 100 % (min) (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature: -55 to 125 (5) Safety standards
UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4).
4. Packaging and Pin Assignment
11-4P1A
©2016-2019 Toshiba Electronic Devices & Storage Corporation
1
1: Anode 3: Cathode 4: Emitter 6: Collector
Start of commercial production
2015-01 2019-12-22
Rev.7.0
5. Mechanical Parameters
TLP383
Characteristics
Creepage distances Clearance Internal isolation thickness
Min
Unit
8.0
mm
8.0
0.4
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
LED Input forward current
IF
50
mA
Input forward current derating Input forward current (pulsed)
(Ta ≥ 90 )
∆IF/∆Ta IFP
(Note 1)
-1.11 1
mA/ A
Input power dissipation
PD
100
mW
Input power dissipation derating
(Ta ≥ 90 )
∆PD/∆Ta
-2.22
mW/
Input reverse voltage Junction temperature
VR
5
V
Tj
135
Detector Collector-emitter voltage
VCEO
80
V
Emitter-collector voltage Collector current
VECO IC
7
V
50
mA
Collector power dissipation
PC
150
mW
Collector power dissipation derating
(Ta ≥ 25 )
∆PC/∆Ta
-1.36
mW/
Junction temperature Common Operating temperature
Tj
135
Topr
-55 to 125
Storage temperature
Tstg
-55 to 125
Lead soldering temperature
(10 s)
Tsol
Total power dissipation
PT
260
250
mW
Total power dissipation derating
(Ta ≥ 25 )
∆PT/∆Ta
-2.27
mW/
Isolation voltage
(AC, 60 s, R.H. ≤ 60 %)
BVS
(Note 2)
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individua.