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TLP383 Dataheets PDF



Part Number TLP383
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocouplers
Datasheet TLP383 DatasheetTLP383 Datasheet (PDF)

Photocouplers Infrared LED & Photo Transistor TLP383 TLP383 1. Applications • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards 2. General TLP383 is a photocoupler of low input and high isolation type that consists of phototransistor optically coupled to infrared LED in a 4-pin SO6L package. TLP383 is guaranteed high isolation voltage (5000 Vrms) and wide operating temperature (Ta = -55 to 125 ). Since TLP383 has a small and thin package compared with a standard DIP p.

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Photocouplers Infrared LED & Photo Transistor TLP383 TLP383 1. Applications • Programmable Logic Controllers (PLCs) • AC Adapters • I/O Interface Boards 2. General TLP383 is a photocoupler of low input and high isolation type that consists of phototransistor optically coupled to infrared LED in a 4-pin SO6L package. TLP383 is guaranteed high isolation voltage (5000 Vrms) and wide operating temperature (Ta = -55 to 125 ). Since TLP383 has a small and thin package compared with a standard DIP package, it is suitable for high-density surface mounting applications such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature: -55 to 125  (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (D4). 4. Packaging and Pin Assignment 11-4P1A ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 1: Anode 3: Cathode 4: Emitter 6: Collector Start of commercial production 2015-01 2019-12-22 Rev.7.0 5. Mechanical Parameters TLP383 Characteristics Creepage distances Clearance Internal isolation thickness Min Unit 8.0 mm 8.0 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit LED Input forward current IF 50 mA Input forward current derating Input forward current (pulsed) (Ta ≥ 90 ) ∆IF/∆Ta IFP (Note 1) -1.11 1 mA/ A Input power dissipation PD 100 mW Input power dissipation derating (Ta ≥ 90 ) ∆PD/∆Ta -2.22 mW/ Input reverse voltage Junction temperature VR 5 V Tj 135  Detector Collector-emitter voltage VCEO 80 V Emitter-collector voltage Collector current VECO IC 7 V 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25 ) ∆PC/∆Ta -1.36 mW/ Junction temperature Common Operating temperature Tj 135  Topr -55 to 125  Storage temperature Tstg -55 to 125  Lead soldering temperature (10 s) Tsol Total power dissipation PT 260  250 mW Total power dissipation derating (Ta ≥ 25 ) ∆PT/∆Ta -2.27 mW/ Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS (Note 2) 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individua.


PBHV9560Z TLP383 M24C04-W


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