4 M-BIT DYNAMIC RAM
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD424210
4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO,
BYTE READ/WRITE MODE
Descript...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD424210
4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO,
BYTE READ/WRITE MODE
Description The µPD424210 is a 262,144 words by 16 bits CMOS dynamic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation. The µPD424210 is packaged in 44-pin plastic TSOP (II) and 40-pin plastic SOJ.
Features EDO (Hyper page mode) 262,144 words by 16 bits organization Single power supply
+5.0 V ± 10 % : µPD424210-60, 424210-70 +5.0 V ± 5 % : µPD424210-60-G
Part number
µPD424210-60 µPD424210-60-G µPD424210-70
Power consumption Active (MAX.) 880 mW 840 mW 825 mW
Access time (MAX.)
60 ns 60 ns 70 ns
R/W cycle time (MIN.)
104 ns 104 ns 124 ns
EDO (Hyper page mode) cycle time (MIN.)
25 ns 25 ns 30 ns
Part number
µPD424210-60 µPD424210-70 µPD424210-60-G
Refresh cycle 512 cycles/8 ms
512 cycles/8 ms
Refresh
CAS before RAS refresh, RAS only refresh, Hidden refresh
Power consumption at standby (MAX.)
5.5 mW (CMOS level input)
5.25 mW (CMOS level input)
The information in this document is subject to change without notice.
Document No. M12941EJ1V0DS00 (1st edition) Date Published September 1997 N Printed in Japan
©
1997
Ordering Information
Part number
µPD424210G5-60-7JF µPD424210G5-60-7JF-G µPD424210G5-70-7JF µPD424210LE-60 µPD424210LE-60-G µPD424210LE-70
Access time (MAX.) 60 60 70 60 60 70
µPD424210
Package 44-pin plastic TSOP(II)
(400 mil)
40-pin plastic SOJ (400 mil)
Refresh
CAS before RAS refresh RAS only refresh ...
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