Schottky Barrier Diode Silicon Epitaxial
CES520
1. Applications
• High-Speed Switching
2. Features
(1) Low reverse curre...
Schottky Barrier Diode Silicon Epitaxial
CES520
1. Applications
High-Speed Switching
2. Features
(1) Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3. Packaging and Internal Circuit
CES520
1: Cathode 2: Anode
ESC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Reverse voltage Peak forward current Average rectified current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Operating temperature
VR IFM IO IFSM PD Tj Tstg Topr
(Note 1) (Note 2)
30 300 200
1 150 125 -55 to 125 -40 to 100
V mA
A mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse. Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Start of commercial production
2010-10
1 2014-04-07 R...