IRLML6244TRPbF

VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 20 ±12 21.0 27.0 V V m m PD - 97535A IRLML6244TRPbF HEXFET® Power MOSFET * 6 ' Micro3TM (SOT-23) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Low RDS(on) ( < 21m) Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen results in  Benefits Lower conduction losses Multi-vendor compatibility Environmentally friendly Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation VGS TJ, TSTG Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol Parameter eRJA Junction-to-Ambient fRJA Junction-to-Ambient (t<10s) Max. 20 6.3 5.1 32 1.3 0.80 0.01 ± 12 -55 to + 150 Typ. ––– ––– Max. 100 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com Units V A W W/°C V °C Units °C/W 1 03/09/12 IRLML6244TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250μA V(BR)DSS/TJ Breakdown Voltage Temp. Coeffici...