HEXFET Power MOSFET
VDS
VGS Max
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
-20 ± 12 54
95
V V mΩ
mΩ
PD - 97631
IRLML2244TRPbF
...
Description
VDS
VGS Max
RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
-20 ± 12 54
95
V V mΩ
mΩ
PD - 97631
IRLML2244TRPbF
HEXFET® Power MOSFET
G1
3D
S 2 Micro3TM (SOT-23) IRLML2244TRPbF
Application(s) System/Load Switch
Features and Benefits Features
Low RDS(on) ( ≤ 54mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification
Benefits
Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
-20 -4.3 -3.4 -18 1.3 0.8 0.01
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
± 12 -55 to + 150
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s)
Typ.
––– –––
Max.
100 99
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
Units
V A
W W/°C
V °C
Units
°C/W
1
1/24/11
IRLML2244TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to...
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