MJE13007 TRANSISTORS Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

NPN PLASTIC POWER TRANSISTORS

Manufacture

CDIL

Total Page 4 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13006
MJE13007
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto Ta=25ºC
Derate above=25ºC
Power Dissipation upto Tc=25ºC
Derate above=25ºC
SYMBOL
VCEO (sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
Operating And Storage Junction
Temperature Range
Tj, Tstg
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
MJE13006
300
600
MJE13007
400
700
9
8
16
4
8
12
24
2
16
80
640
- 65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
Rth (j-c)
Rth (j-a)
TL
1.56 ºC/W
62.5 ºC/W
275 ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter sustaining voltage **VCEO(sus)
IC=10mA, IB=0
MJE13006
MJE13007
Collector Cut Off Current
ICEV VCEV=Rated Value,VBE=(off)=1.5V
Emitter Cut Off Current
DC Current Gain
IEBO
**hFE
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
TC=100ºC
VCEV=Rated Value,VBE=(off)=1.5V
VEB=9V, IC=0
IC=2A, VCE=5V
IC=5A, VCE=5V
MIN
300
400
8
5
TYP
MAX
1.0
5.0
1.0
60
30
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

MJE13007
NPN PLASTIC POWER TRANSISTORS
MJE13006
MJE13007
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Saturation Voltage
**VCE(sat)
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=5A, IB=1A, Tc=100ºC
Base Emitter Saturation Voltage
**VBE(sat)
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=5A, IB=1A, Tc=100ºC
Current Gain-Bandwidth Product
fT IC=500mA,VCE=10V, f=1MHz
Output Capacitance
Cob VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
td
tr
ts
tf
TEST CONDITION
VCC=125V, IC=5A, IB1=IB2=1A,
tp=25µs, Duty Cycle<1%
Inductive Load, Clamped
Voltage Storage Time
tsv
Crossover Time
tC
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
VClamp=300V, IC=5A, IB1=1A,
VBE(off)=5V, Tc=100ºC
MIN TYP MAX
1
2
3
3
1.2
1.6
1.5
4
110
UNIT
V
V
V
V
V
V
V
MHz
pF
MIN TYP MAX
0.1
1.5
3.0
0.7
UNIT
µs
µs
µs
µs
2.3 µs
0.7 µs
Continental Device India Limited
Data Sheet
Page 2 of 4


Features Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company NPN PLASTIC POWER TRANSISTO RS MJE13006 MJE13007 TO-220 Plastic Pa ckage Switchmode Series NPN Silicon Po wer Transistors ABSOLUTE MAXIMUM RATIN GS DESCRIPTION Collector Emitter Sustai ning Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous *Peak Base Current Continuou s *Peak Emitter Current Continuous *Pea k Power Dissipation upto Ta=25ºC Derat e above=25ºC Power Dissipation upto Tc =25ºC Derate above=25ºC SYMBOL VCEO (sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD Operating And Storage Junction Tem perature Range Tj, Tstg * Pulse Test: Pulse Width =5ms, Duty Cycle<10% MJE1 3006 300 600 MJE13007 400 700 9 8 16 4 8 12 24 2 16 80 640 - 65 to +150 UNIT V V V A A A A A A W mW/ºC W mW/ºC º C THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Maxmium Lead Temperature for Soldering Purpose 1/8" from Case for 5 Seconds Rth (j-c) Rth (j-a) TL 1.56 ºC/W 62.5 .
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