A2022

Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions Tc=25˚C Conditions VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)500mA VCB=(–)10V, f=1MHz 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO220ML Ratings (–50)60 (–)50 (–)6 (–)7 (–)10 (–)1.2 2 18 150 –55 to +150 Unit V V V A A A W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 150 300 (290) MHz 330 MHz (50)28 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications th...