A2025

Ordering number:ENN6404 PNP Epitaxial Planar Silicon Transistor 2SA2025 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Package Dimensions unit:mm 2033A [2SA2025] 4.0 2.2 0.4 0.5 0.4 0.4 0.6 1.8 15.0 3.0 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–12V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–500mA VCB=–10V, f=1MHz IC=–1.5A, IB=–30mA IC=–1.5A, IB=–30mA 3.0 3.8nom 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings –15 –12 –5 –3 –5 –600 0.55 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Ratings min typ max Unit –0.1 µA –0.1 µA 200 560 280 MHz 36 pF –110 –165 mV –0.85 –...