2SA2029

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SA2029 General 3urpose 7ransistors (PNP) FEATURES z Excellent hFE linearity z Complements the 2SC5658 Marking: FQFRFS SOT-723 1. BASE 2. EMITTER 3. COLLECTOR Absolute maximum ratings (Ta=25℃) Symbol Parameter VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction temperature Storage Temperature Limit -60 -50 -6 -150 150 150 -55~+150 Unit V V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=2mA, f=30MHz VCB=-12V,IE=0, f=1MHz Classification of hFE Rank Range Q 120~270 R 180~390 Min Typ Max Unit -60 V -50 V -6 V -0.1 μA -0.1 μA 120 560 -0.5 V 140 MHz 5 pF S 270~560 &-XQ,201 Typical Characterisitics COLLECTOR CURRENT IC (mA) -8 -6 -4 -2 -0 -0 -3000 Static Characteristic -30uA -27uA -24uA COMMON EMITTER Ta=25℃ -21uA -18uA -15uA -12uA -9uA -6uA IB=-3uA -2 -4 -6 -8 COLLECTOR-EMITTE...