A2061

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2061 Unit: mm High DC current gain: hFE = 200 to 500 (IC = −0.5 A) Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V Collector current Base current Collector power dissipation DC Pulse t = 10 s DC IC ICP IB PC (Note 1) −2.5 −4 −250 1 0.625 A mA W JEDEC JEITA TOSHIBA ― ― 2-3S1C Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-17 Electrical Characteristi...