PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntci...
PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie
This product complies with the RoHS Directive (EU 2002/95/EC).
Power
Transistors
2SA2067
Silicon
PNP epitaxial planar type
Power supply for audio & visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters
4.2±0.2
10.0±0.2
Unit: mm
5.0±0.1 1.0±0.2
13.0±0.2e/
2.5±0.1 90˚
Productnnua
■ Features
High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity Allowing automatic insertion eith radial taping
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO VCEO VEBO
IC ICP PC
Tj Tstg
−60 −60 −6 −3 −6 15 2.0 150 −55 to +150
Unit V V V A A W
°C °C
18.0±0.5endc Solder Dip
lifecycle stage.
0.65±0.1 0.35±0.1
2.5±0.2
1.2±0.1 1.48±0.2
0.65±0.1 1.05±0.1 0.55±0.1 2.5±0.2
C 1.0 2.25±0.2
0.55±0.1
123
1 : Base 2 : Collector 3 : Emitter MT-4-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Ty...