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FTD1012 Dataheets PDF



Part Number FTD1012
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Load Switching Applications
Datasheet FTD1012 DatasheetFTD1012 Datasheet (PDF)

Ordering number : ENN7000 FTD1012 P-Channel Silicon MOSFET FTD1012 Load Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Paramet.

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Ordering number : ENN7000 FTD1012 P-Channel Silicon MOSFET FTD1012 Load Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 Ratings Unit --30 ± 20 --3 -15 0.8 1.0 150 --55 to +150 Mounted on a ceramic board (1000mm 2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--3A Ratings min --30 --1 ± 10 --1.0 3.8 5.5 --2.4 typ max Unit V µA µA V S Marking : D1012 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71001 TS IM TA-2300 No.7000-1/4 FTD1012 Continued from preceding page. Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--3A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A IS=--3A, VGS=0 Ratings min typ 50 80 85 1000 250 160 10 30 55 50 19 2 4 --1.0 --1.5 max 65 110 120 Unit mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --15V Electrical Connection D2 S2 S2 G2 ID= --3A RL=5Ω D VOUT G FTD1012 P.G 50Ω S D1 S1 --6 S1 G1 ID -- VDS V --8.0V --6.0V --8 ID -- VGS VDS= --10V 5V 0V --4 . --5 --4 . --7 --6 --5 --4 --3 --2 --1 Drain Current, ID -- A --3 --10. 0 --4 .0 --3 V Drain Current, ID -- A --2 VGS= --2.5V Ta= 25 75 °C °C 0 --0.5 --1.0 --1.5 --2.0 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, VDS -- V 140 IT02537 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 140 --25 °C IT02538 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 120 100 ID= --2A 80 --3A 100 80 4.0V = -S VG , .5V --2A = --4 S I D= VG , --2A I D= A I D= --3 --10.0 , V GS= V 60 60 40 40 20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02539 Ambient Temperature, Ta -- °C IT02540 No.7000-2/4 FTD1012 Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02541 --10 yfs -- ID VDS= --10V --10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A C 25° --1.0 7 5 3 2 --0.1 7 5 3 2 Ta= °C --25 C 75° --0.01 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT02542 --0.001 10000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A Diode Forward Voltage, VSD -- V --9 Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF 1000 7 5 3 2 100 7 5 3 2 10 0 --5 --10 --15 --20 Ciss Coss Crss --25 --30 IT02543 3 2 --10 7 5 Ta=7 5°C 25°C.


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