STI13005-1

STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STI13005-1 I13005 Package IPAK Packaging Tube February 2010 Doc ID 17147 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0; IB = 1.5 A; tp < 10 ms) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case _ _ _ ___ _ ___ max STI13005-1 Value 700 400 V(BR)...