SSFP16N40

SSFP16N40 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 400V ID25 = 17A RDS(ON) = 0.3Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 17.0 10.8 68.0 202 1.61 ±30 1156 17 20.2 4.0 –55 to +150 300(1.6mm from case) 10 Ibf●in(1.1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 0.62 RθCS Case-to-Sink,Flat,Greased Surface — 0.24 — RθJA Junction-to-Ambient — — 40 Downloaded from Elcodis...