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SSFP5N20 Dataheets PDF



Part Number SSFP5N20
Manufacturers Good-Ark
Logo Good-Ark
Description Power MOSFET
Datasheet SSFP5N20 DatasheetSSFP5N20 Datasheet (PDF)

SSFP5N20 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through.

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SSFP5N20 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 200V ID25 =5A RDS(ON) =0.8Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 5.0 3.0 20 40 0.32 ±20 85 6.0 5.0 - –25 to +150 300(1.6mm from case) 10 Ibf●in(1.1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient — — — — 3.12 - 0.5 — 80 Units ْC/W 1 SSFP5N20 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — — - — V VGS=0V,ID=250μA — V/ْC Reference to 25ْC,ID=1mA RDS(on) VGS(th) Static Drain-to-Source On-resistance — Gate Threshold Voltage 2.0 - — 0.8 Ω VGS=10V,ID=2.5A 4.0 V VDS=VGS,ID=250μA gfs Forward Transconductance 1.3 - — S VDS=10V,ID=2.5A — — 250 VDS=Rated VDSS,VGS=0V IDSS Drain-to-Source Leakage current — — μA VDS=0.8×Rated VDSS, 1000 VGS=0V,TJ=125ْC Gate-to-Source Forward leakage — — 500 VGS=20V IGSS Gate-to-Source Reverse leakage nA — — -500 VGS=-20V Qg Total Gate Charge — 11 15 VGS=10V Qgs Gate-to-Source charge — 5.0 — nC ID=6.0A Qgd Gate-to-Drain("Miller") charge — 6.0 — VDD=45V td(on) Turn-on Delay Time — - 40 VDD=100V tr td(off) tf Rise Time Turn-Off Delay Time Fall Time — - 60 ID=2.5A — - 100 nS VGS=10V — - 60 RGEN=50Ω RGS=50Ω LD Internal Drain Inductance — 4.5 — Between lead, 6mm(0.25in.) nH from package LS Internal Source Inductance - 7.5 — and center of die contact Ciss Input Capacitance — 600 — VGS=0V Coss Output Capacitance — 300 — pF VDS=25V Crss Reverse Transfer Capacitance — 80 — f=1.0MHZ See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Continuous Source Current . IS (Body Diode) Pulsed Source Current ISM (Body Diode) ① . VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge — — — - - — 5.0 — 20 — 1.8 350 - 2.3 - MOSFET symbol showing the A integral reverse p-n junction diode. V TJ=25ْC,IS=5.0A,VGS=0V ④ nS TJ=25ْC,IS=5.0A nC di/dt=25A/μs ④ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ② L =6.18mH, IAS = 5.0A, VDD = 10V, RG = 25Ω, Starting TJ = 25°C ③ ISD≤5A,di/dt≤60A/μS,VDD≤V(BR)DSS, TJ≤150ْ C ④ Pulse width≤300μS; duty cycle≤2% 2 .


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