Power MOSFET
SSFP6N80
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requireme...
Description
SSFP6N80
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 800V ID25 = 5.8A RDS(ON) = 1.95Ω
Pin1–Gate Pin2–Drain Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C ID@Tc=100ْC
Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 5.8 3.67 23.2 158 1.27 ±30 680 5.8 15.8 4.0
–55 to +150
300(1.6mm from case) 10 Ibf●in(1.1N●m)
Units
A
W W/ْ C
V mJ A mJ V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.79
RθCS
Case-to-Sink,Flat,Greased Surface
—
—
40
RθJA Junction-to-Ambient
— — 62.5
Units ْC/W
1
SSFP6N80...
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