D1680

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1680 DESCRIPTION www.dat·aWshiethet4TuO.co-3mPFa package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current (Pulse) PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 330 200 6 7 10 3 70 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1680 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A VBEsat Base-emitter saturation voltage ICES Collector cut-off current IEBO Emitter cut-off current IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100 VEB=6V; IC=0 hFE DC current gain tf Fall time IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5> MIN TYP. MAX UNIT 200 V 330 V 1.0 V 1.2 V 1 15 mA 1 mA 15 0.75 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLIN...