Document
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FS450R12KE3
-EconoPACK™+ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode -EconoPACK™+withtrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES
IC nom IC
ICRM
Ptot
VGES
1200 450 600 900
2100
+/-20
V
A A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 18,0 mA, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload
IC = 450 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω
Tvj = 25°C Tvj = 125°C
Anstiegszeit,induktiveLast Risetime,inductiveload
IC = 450 A, VCE = 600 V VGE = ±15 V RGon = 1,6 Ω
Tvj = 25°C Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload
IC = 450 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω
Tvj = 25°C Tvj = 125°C
Fallzeit,induktiveLast Falltime,inductiveload
IC = 450 A, VCE = 600 V VGE = ±15 V RGoff = 1,6 Ω
Tvj = 25°C Tvj = 125°C
EinschaltverlustenergieproPuls Turn-onenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH VGE = ±15 V RGon = 1,6 Ω
Tvj = 25°C Tvj = 125°C
AbschaltverlustenergieproPuls Turn-offenergylossperpulse
IC = 450 A, VCE = 600 V, LS = 80 nH VGE = ±15 V RGoff = 1,6 Ω
Tvj = 25°C Tvj = 125°C
Kurzschlußverhalten SCdata
VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VCE sat VGEth QG RGint Cies Cres ICES IGES td on
tr
td off
tf
Eon
Eoff ISC RthJC RthCH Tvj op
min. typ. max.
1,70 2,15 2,00
V V
5,0 5,8 6,5 V
4,30 µC
1,7 Ω
32,0 nF
1,50 nF
5,0 mA
400 nA
0,25 0,30
µs µs
0,09 0,10
µs µs
0,55 0,65
µs µs
0,13 0,16
µs µs
mJ 33,0 mJ
mJ 65,0 mJ
1800
A
0,06 K/W
0,048
K/W
-40 125 °C
preparedby:MB approvedby:WR
dateofpublication:2013-10-02 revision:3.1
1
TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FS450R12KE3
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C
Dauergleichstrom ContinuousDCforwardcurrent
PeriodischerSpitzenstrom Repetitivepeakforwardcurrent
tP = 1 ms
Grenzlastintegral I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
CharakteristischeWerte/CharacteristicValues
Durchlassspannung Forwardvoltage
IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V
Tvj = 25°C Tvj = 125°C
Rückstromspitze Peakreverserecoverycurrent
IF = 450 A, - diF/dt = 5200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Sperrverzögerungsladung Recoveredcharge
IF = 450 A, - diF/dt = 5200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
AbschaltenergieproPuls Reverserecoveryenergy
IF = 450 A, - diF/dt = 5200 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase
proDiode/perdiode
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb Temperatureunderswitchingconditions
VRRM IF IFRM I²t
1200 450 900 35000
V A A A²s
min. typ. max.
VF
1,65 2,15 V 1,65 V
315 A IRM 405 A
45,0 µC Qr 85,0 µC
21,0 mJ Erec 39,0 mJ
RthJC
0,10 K/W
RthCH
0,08
K/W
Tvj op
-40
125 °C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
Nennwider.