MDS1653

MDS1653 – Single N-channel Trench MOSFET 30V MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mΩ General Description The MDS1653 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1653 is suitable device for DC-DC Converters and general purpose applications. Features à VDS = 30V à ID = 12A @VGS = 10V à RDS(ON) < 12.0mΩ @VGS = 10V < 17.5mΩ @VGS = 4.5V Applications à DC-DC Converters 6(D) 5(D) 7(D) 8(D) D 4(G) 2(S)3(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case G Ta=25oC Ta=100oC Ta=25oC Ta=100oC Feb. 2011. Version 1.1 1 S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 12 8.6 50 2.5 1.25 50 -55~150 Unit V V A A A W mJ oC Symbol RθJA RθJC Rating 50 25 Unit oC/W MagnaChip Semiconductor Ltd. MDS1653 – Single N-channel Trench MOSFET 30V Ordering Information Part Number MDS1653URH Temp. Range -55~150oC Package SOIC-8 Packing Tape & Reel ROHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-So...