PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001
Product data
1. Desc...
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect
transistor
Rev. 03 — 23 October 2001
Product data
1. Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™1 technology.
Product availability: PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT in SOT404 (D2-PAK) PHD96NQ03LT in SOT428 (D-PAK).
2. Features
s Low gate charge s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g) 2 drain (d)
mb [1]
mb
mb
3 source (s)
mb mounting base, connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2 1 3 MBK116
SOT404 (D2-PAK)
2 1
Top view
3
MBK091
SOT428 (D-PAK)
Symbol
g
MBB076
d s
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS ID Ptot Tj RDSon
drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
6. Limiting values
Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C
Tj = 25° C; VGS = 10 V; ID = 25 A Tj = 25° C; VGS = 5 V; ID = 25 A
Table 3: Limiting values In accordance with the Abso...
