DIGITRON SEMICONDUCTORS
MUR470E-MUR4100E
4A SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage...
DIGITRON SEMICONDUCTORS
MUR470E-MUR4100E
4A
SCHOTTKY RECTIFIER
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current (square wave) Mounting method 3, per note 2 Non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60Hz) Operating and storage junction temperature range Maximum thermal resistance Junction to ambient
Symbol VRRM VRWM VR IF(AV)
IFSM
TJ, Tstg RӨJA
470E 700
MUR
480E
490E
800 900
4.0 @ TA = 35°C 70
-65 to +175 Note 1
4100E 1000
Unit V
A
A °C °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
470E
MUR
480E
490E
Maximum instantaneous forward voltage (1) (IF = 3.0A, TJ = 150°C) (IF = 3.0A, TJ = 25°C) (IF = 4.0A, TJ = 25°C)
VF
1.53 1.75 1.85
Maximum instantaneous reverse current (1) (Rated dc voltage, TJ = 100°C) (Rated dc voltage, TJ = 25°C)
IR
900 25
Maximum reverse recovery time (IF = 1.0A, di/dt = 50A/µs) (IF = 0.5A, IR = 1.0A, IREC = 0.25A)
trr
100 75
Maximum forward recovery time (IF = 1.0A, di/dt = 100A/µs, recovery to 1.0V)
tfr
75
Controlled avalanche energy
Note 1: Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%. Note 2: PC board with 1 ½” x 1 ½” copper surface.
WAVAL
20
MECHANICAL CHARACTERISTICS
Case
DO-201A
Marking
Body painted, alpha-numeric
Polarity
Cathode band
4100E
Unit
V
µA
ns ns mJ
144 Market Street Kenilworth NJ 07033 USA
phone +1.908.245-7...