B60NH02L

STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V < 0.0105 Ω 60 A ■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V )■ RDS(ON) * Qg INDUSTRY’s BENCHMARK t(s■ CONDUCTION LOSSES REDUCED c■ SWITCHING LOSSES REDUCED u■ LOW THRESHOLD DEVICE rod■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR PIN TAPE & REEL (SUFFIX “T4”) leteDESCRIPTION oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology. This is bsuitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. ) - OAPPLICATIONS t(s■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM te ProducOrdering Information leSALES TYPE oSTB60NH02LT4 MARKING B60NH02L ObsABSOLUTE MAXIMUM RATINGS PACKAGE TO-263 PACKAGING TAPE & REEL Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 43 A IDM(2) Drain Current (pulsed) 240 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C EAS (3) Single Pulse Avalanche Energy 280 mJ Tstg Storage Temperature Tj Max. Operating Junction Temperature -55 to 175 °C May...