FTS1001

Ordering number:ENN6093A P-Channel Silicon MOSFET FTS1001 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS1001] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 7 : Source 0.125 8 : Drain SANYO : TSSOP8 4.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 6.4 Ratings –20 ±10 –4 –20 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–4A ID=–4A, VGS=–4V ID=–2A, VGS=–2.5V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –0.4 8 10 45 65 980 500 210 58 98 Conditions Ratings min –20 –10 ±10 –1.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : S1001 Continued on next page. Any and all SANYO product...